ESDA6V8BLF will semiconductor ltd. 1 revision 1.6, 2015/07/01 esd a6v8 b l f 2 - line , b i - d irectional, low - capacitance, trans ient voltage suppressors descriptions the ESDA6V8BLF is a b i - directional transient voltage suppressors (tvs) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (esd). it is designed to replace multilayer varist ors (mlv) in consumer equipment applications such as mobile phone, notebook, pad, stb, lcd tv etc. the esd a6v8blf is based on solid - state silicon technology and off er unique electrical characteristics like lower clamping voltage and no device degrading compared to mlv. the esda6v8 blf is past esd transient voltage up to 8kv (contact) according to iec61000 - 4 - 2 and will withstand peak current up to 3 a for 8/20 s pulse to meet the iec61000 - 4 - 5. the ESDA6V8BLF is available in sot - 23 - 3 l package. standard products are pb - free and halogen - free. features ? working voltage : 5.0v max ? transient protection for each line according to iec61000 - 4 - 2 (esd): 8kv ( contact discharge) 15kv ( air discharge) iec61000 - 4 - 4 (eft): 40a (5/50ns) iec61000 - 4 - 5 (surge): 3a (8/20 s) ? low capacitance: c j = 5.0 pf typ. ? low leakage current ? small package applications ? cell phone ? notebook ? stb ? digital camera ? other electronics equipment h ttp//:www. sh - willsemi.com sot - 2 3 circuit diagram sot - 2 3 b = device code ww = date code marking & pin c onfiguration order i nformation device package shipping ESDA6V8BLF - 3 /tr sot - 23 3000 /tape&reel g n d 1 2 3 i / o 1 i / o 2 gnd 1 2 3 i / o 1 i / o 2 bww
ESDA6V8BLF will semiconductor ltd. 2 revision 1.6, 2015/07/01 absolute m aximum r ating s electrical ch aracteristics (t a =25 o c, unless otherwise noted) parameter symbol rating unit peak pulse power (tp=8/20 s) pp k 3 3 w peak pulse cur rent (tp=8/20 s) ipp 3 a esd v oltage iec61000 - 4 - 2 air v esd 15 k v esd v oltage iec61000 - 4 - 2 contact 8 j unction t emperature t j 1 25 o c operating temperature t op - 40 ~ 85 o c lead t emperature t l 260 o c storage t emperature t stg - 55~150 o c v v r w m v t r i g v h o l d i p p i r i t r i g i h o l d v c l i p p v r w m v t r i g v h o l d v c l i r i t r i g i h o l d v r w m r e v e r s e s t a n d - o f f v o l t a g e i r r e v e r s e l e a k a g e c u r r e n t v c l c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t v t r i g r e v e r s e t r i g g e r v o l t a g e i t r i g r e v e r s e t r i g g e r c u r r e n t v b r r e v e r s e b r e a k d o w n v o l t a g e i b r r e v e r s e b r e a k d o w n c u r r e n t v h o l d r e v e r s e h o l d i n g v o l t a g e i h o l d r e v e r s e h o l d i n g c u r r e n t i b r v b r i b r v b r
ESDA6V8BLF will semiconductor ltd. 3 revision 1.6, 2015/07/01 electronics characteristics (ta=25 o c, unless otherwise noted) notes: 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2ns, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact dis charge mode, according to iec61000 - 4 - 2. 3) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symbol condition min. typ. max. unit rever se maximum working voltage v rwm 5.0 v rever se leakage current i r v rwm = 5 v 1 .0 a reveres breakdown voltage v br i t =1ma 6. 2 8. 2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 13 v dynamic resistance 1) r dyn 0.4 clamping voltage 2) v cl v esd = 8kv 13 v clamping voltage 3 ) v c ipp=1a tp=8/20 s 8 .5 v ipp= 3 a tp=8/20 s 11 v junction capacitance c j f =1mhz, v r =0v any i/o pin to g nd 5. 0 10 pf f =1mhz, v r =0v between i/o pins 2. 5 5 pf
ESDA6V8BLF will semiconductor ltd. 4 revision 1.6, 2015/07/01 typical characteristics (ta=25 o c, unless otherwise noted ) 8/20 s w aveform per iec61000 - 4 - 5 contact discharge cu rrent waveform per iec61000 - 4 - 2 clamping voltage vs. peak pulse current capacitance vs. reverse voltage non - repetitive peak pulse power vs. pulse time power derating vs. ambient temperature 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time( s ) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 any io pin to gnd gnd to any io pin pulse waveform: tp=8/20s v c - clamping voltage (v) ipp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 0 100 90 50 10 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 s time to half-value: t 2 = 20 s peak pulse current (%) time ( s) t -5 -4 -3 -2 -1 0 1 2 3 4 5 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.75 5.00 5.25 5.50 5.75 6.00 f = 1mhz v ac = 50mv c j - junction capacitance (pf) v r - reverse voltage (v)
ESDA6V8BLF will semiconductor ltd. 5 revision 1.6, 2015/07/01 20ns/div 10v/div 20ns/div 10v/div typical characteristics (t a = 25 o c, unless otherwise noted) esd clamping esd clamping (+8kv contact discharge per iec61000 - 4 - 2) ( - 8kv contact discharge per iec61000 - 4 - 2) tlp measurement -15 -10 -5 0 5 10 15 -20 -10 0 10 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
ESDA6V8BLF will semiconductor ltd. 6 revision 1.6, 2015/07/01 package outline dimensions sot-23 recommend land pattern (unit: mm) symbol dimensions in millimeter min. typ. max. a 0.900 - 1.150 a1 0.000 - 0.100 a2 0.900 - 1.050 b 0.300 - 0.500 c 0.080 - 0.150 d 2.800 - 3.000 e 1.200 - 1.400 e1 2.250 - 2.550 e 0.950typ e1 1.800 2.000 l 0.500ref l1 0.300 - 0.500 0 - 8 d e e1 b e e1 a1 a2 a l l1 c 0.25 notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. 0.80 0.80 2.82 2.02 1.90
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